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CY62138EV30
®
MoBL
®
2-Mbit (256K x 8) MoBL Static RAM
[1]
Features Functional Description
• Very high speed: 45 ns The CY62138EV30 is a high-performance CMOS static RAM
organized as 256K words by 8 bits. This device features
— Wide voltage range: 2.20V – 3.60V
advanced circuit design to provide ultra-low active current.
®
• Pin-compatible with CY62138CV30
This is ideal for providing More Battery Life™ (MoBL ) in
portable applications such as cellular telephones. The device
• Ultra-low standby p
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CY62138EV30 ® MoBL [2] Pin Configuration FBGA Top View A A A A A NC 3 6 8 A 0 1 A I/O WE A I/O B A 4 4 7 0 2 NC A C I/O I/O 5 5 1 V V SS cc D V V E ss CC F I/O NC A I/O 17 6 2 CE I/O A G OE A I/O 16 7 15 3 A A A A A A 10 11 12 13 H 9 14 Product Portfolio Power Dissipation Operating I (mA) CC Product V Range (V) f = 1 MHz f = f Standby I (µA) CC max SB2 Speed [3] [3] [3] [3] Min. Typ. Max. (ns) Typ. Max. Typ. Max. Typ. Max. CY62138EV30LL 2.2 3.0 3.6 45 2 2.5 15 20 1 7 Notes: 2. NC pins are not
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CY62138EV30 ® MoBL [4,5] DC Input Voltage ......................–0.3V to V + 0.3V Maximum Ratings CC(MAX) Output Current into Outputs (LOW)............................. 20 mA (Above which the useful life may be impaired. For user guide- Static Discharge Voltage.......................................... > 2001V lines, not tested.) (per MIL-STD-883, Method 3015) Storage Temperature ..................................–65°C to +150°C Latch-up Current...................................................
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CY62138EV30 ® MoBL Thermal Resistance Parameter Description Test Conditions BGA Unit Θ Thermal Resistance Still Air, soldered on a 3 x 4.5 inch, four-layer 72 °C/W JA (Junction to Ambient) printed circuit board Θ Thermal Resistance 8.86 °C/W JC (Junction to Case) AC Test Loads and Waveforms R1 V CC ALL INPUT PULSES OUTPUT V CC 90% 90% 10% 10% R2 30 pF GND Fall time: 1 V/ns Rise Time: 1 V/ns INCLUDING JIG AND SCOPE Equivalent to: THÉVENIN EQUIVALENT R TH OUTPUT V TH Parameters 2.50V 3.0V Unit R
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CY62138EV30 ® MoBL [9] Switching Characteristics (Over the Operating Range) 45 ns Parameter Description Min. Max. Unit Read Cycle t Read Cycle Time 45 ns RC t Address to Data Valid 45 ns AA t Data Hold from Address Change 10 ns OHA t CE LOW to Data Valid 45 ns ACE t OE LOW to Data Valid 22 ns DOE [10] t OE LOW to Low Z 5ns LZOE [10,11] t OE HIGH to High Z 18 ns HZOE [10] t CE LOW to Low Z 10 ns LZCE [10, 11] t CE HIGH to High Z 18 ns HZCE t CE LOW to Power-up 0 ns PU t CE HIGH to Power-up 45 ns
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CY62138EV30 ® MoBL Switching Waveforms (continued) [14, 15] Read Cycle No. 2 (OE Controlled) ADDRESS t RC CE t ACE OE t HZOE t DOE t HZCE t LZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA OUT DATA VALID t LZCE t PD t PU V I CC CC SUPPLY 50% 50% CURRENT I SB [16, 18] Write Cycle No. 1 (WE Controlled) t WC ADDRESS t SCE CE t t AW HA t t SA PWE WE OE t SD t HD DATA I/O DATA NOTE17 VALID IN t HZOE Notes: 15. Address valid prior to or coincident with CE transition LOW. 16. Data I/O is high impedance if OE
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CY62138EV30 ® MoBL Switching Waveforms (continued) [16, 18] Write Cycle No. 2 (CE Controlled) t WC ADDRESS t SCE CE t HA t SA t AW t PWE WE OE t t SD HD DATA I/O DATA VALID IN [18] Write Cycle No. 3 (WE Controlled, OE LOW) t WC ADDRESS t SCE CE t t AW HA t SA t WE PWE t t SD HD DATA I/O DATA VALID NOTE 17 IN t t HZWE LZWE Truth Table CE WE OE Inputs/Outputs Mode Power H X X High Z Deselect/Power-down Standby (I ) SB L H L Data Out (I/O –I/O ) Read Active (I ) 0 7 CC L H H High Z Output Disabl
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CY62138EV30 ® MoBL Ordering Information Speed Package Operating (ns) Ordering Code Diagram Package Type Range 45 CY62138EV30LL-45BVXI 51-85149 36-ball Very Fine Pitch BGA (6 mm × 8 mm × 1 mm) (Pb-free) Industrial Package Diagrams 36-ball VFBGA (6 x 8 x 1 mm) (51-85149) BOTTOM VIEW TOP VIEW A1 CORNER Ø0.05 M C Ø0.25MCAB A1 CORNER Ø0.30±0.05(36X) 1 2346 5 65 4 3 2 1 A A B B C C D D E E F F G G H H 1.875 A A 0.75 B 6.00±0.10 3.75 B 6.00±0.10 0.15(4X) SEATING PLANE 51-85149-*C C MoBL is a registered
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CY62138EV30 ® MoBL Document History Page ® Document Title: CY62138EV30 2-Mbit (256K x 8) MoBL Static RAM Document Number: 38-05577 Issue Orig. of REV. ECN NO. Date Change Description of Change ** 237432 See ECN AJU New data sheet *A 427817 See ECN NXR Removed 35 ns Speed Bin Removed “L” version Removed 32-pin TSOPII package from product Offering. Changed ball C3 from DNU to NC. Removed the redundant footnote on DNU. Moved Product Portfolio from Page # 3 to Page #2. Changed I (Max) value from 2
