Inhaltszusammenfassung zur Seite Nr. 1
2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1062-1100
(Previous: ADE-208-694I)
Rev.11.00
Sep 07, 2005
Features
• Low on-resistance
R = 6 mΩ typ.
DS(on)
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
1. Gate
2. Drain
(Flange)
G
3. Source
1
2
3
S
Rev.11.00 Sep 07, 2005 page 1 of 7
Inhaltszusammenfassung zur Seite Nr. 2
2SK3069 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V 60 V DSS Gate to source voltage V ±20 V GSS Drain current I 75 A D Note 1 Drain peak current I 300 A D(pulse) Body-drain diode reverse drain current I 75 A DR Note 3 Avalanche current I 50 A AP Note 3 Avalanche energy E 214 mJ AR Note 2 Channel dissipation Pch 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µ s, duty cycle ≤ 1 % 2.
Inhaltszusammenfassung zur Seite Nr. 3
1 ms PW = 10 ms (1 shot) 10 µs 100 µs DC Operation (Tc = 25°C) 2SK3069 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 200 1000 300 150 100 30 10 100 Operation in 3 this area is limited by R DS(on) 1 50 0.3 Ta = 25°C 0.1 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature T (°C) Drain to Source Voltage V (V) C DS Typical Output Characteristics Typical Transfer Characteristics 100 100 V = 10 V GS Pulse Test V = 10 V DS 5 V Pulse Test 80 80 4 V 3.
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2SK3069 Static Drain to Source on State Forward Transfer Admittance Resistance vs. Temperature vs. Drain Current Ω 20 500 Pulse Test V = 10 V DS 200 Pulse Test 16 100 20 A 50 Tc = –25°C I = 50 A D 12 10 A 20 10 4 V 8 25°C 10, 20, 50 A 5 75°C V = 10 V 2 4 GS 1 0 0.5 –50 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature T (°C) Drain Current I (A) C D Body to Drain Diode Reverse Typical Capacitance Recovery Time vs. Drain to Source Voltage 1000 30000 V = 0 GS f = 1 MHz 500 10000 Ciss
Inhaltszusammenfassung zur Seite Nr. 5
2SK3069 Reverse Drain Current vs. Maximum Avalanche Energy vs. Source to Drain Voltage Channel Temperature Derating 250 100 I = 50 A AP 10 V V = 25 V DD 200 80 5 V duty < 0.1 % Rg > 50 Ω 150 60 V = 0, –5 V GS 100 40 50 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 Source to Drain Voltage V (V) Channel Temperature Tch (°C) SD Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D = 1 0.5 0.3 θ γ θ ch – c(t) = s (t) • ch – c
Inhaltszusammenfassung zur Seite Nr. 6
2SK3069 Switching Time Test Circuit Switching Time Waveforms 90% Vout Vin Monitor Monitor D.U.T. 10% Vin R L Vout 10% 10% V Vin DD 50 Ω = 30 V 10 V 90% 90% t t t d(on) d(off) t r f Rev.11.00 Sep 07, 2005 page 6 of 7
Inhaltszusammenfassung zur Seite Nr. 7
2SK3069 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] Unit: mm SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g 11.5 Max 10.16 ± 0.2 4.44 ± 0.2 9.5 +0.1 1.26 ± 0.15 φ 3.6 –0.08 8.0 2.7 Max 1.5 Max 0.76 ± 0.1 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name Quantity Shipping Container 2SK3069-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of productio
Inhaltszusammenfassung zur Seite Nr. 8
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appr
