Bedienungsanleitung Panasonic Schottky Barrier Diodes MA2SD290G

Inhaltszusammenfassung zur Seite Nr. 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2SD290G
Silicon epitaxial planar type
For super high speed switching
■ Package
■ Features
•
Code
• Low forward voltage: V < 0.42 V (at I = 100 mA)
F F
SSMini2-F4
• Optimum for high frequency rectification because of its short
•
Pin Name
reverse recovery time t .
rr
1: Anode
2: Cathode
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit
■ Marking Symbol: 8M
Reverse voltage V 30 V
R
Repe

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This product complies with the RoHS Directive (EU 2002/95/EC). MA2SD290G I  V I  V C  V F F R R t R 3 3 25 10 10 T = 25°C a T = 125°C a 2 10 T = 125°C a 20 2 75°C 10 75°C 10 25°C 15 −25°C 1 10 25°C 10 −1 10 1 5 −2 10 −3 10 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R I  T F(AV) a 140 T = 125°C j I F t p 120 T DC 100 80 60 40 20 0 0 40 80 120 160 Ambient temperature T (°C) a 2 SKH00180AED (

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This product complies with the RoHS Directive (EU 2002/95/EC). MA2SD290G SSMini2-F4 Unit: mm +0.05 +0.05 0.80 −0.03 0.13 −0.02 2 0 to 0.05 1 0.30 ±0.05 5° SKH00180AED 3 +0.05 0.60 −0.03 5° (0.15) +0.05 0.20 ±0.05 1.20 −0.03 1.60 ±0.05

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application