Bedienungsanleitung Panasonic UP0KG8D

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Multi Chip Discrete
UP0KG8D
Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)
Unit: mm
For digital circuits
+0.05
(0.30) 0.20 –0.02 0.10±0.02
5 4
 Features
 Two elements incorporated into one package (SBD + Tr)
 Costs can be reduced through downsizing of the equipment and reduction of
1 2 3
(0.50)(0.50)
the number of parts
1.00±0.05
1.60±0.05
 Basic Part Number
Display at No.1 lead
 MA2SD24 + UNR31A3
5°
 Absolute Maximum Ratings T = 25 °C
a
Parameter Symbol Rati

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UP0KG8D  Electrical Characteristics T = 25 °C ±3 °C a  SBD Parameter Symbol Conditions Min Typ Max Unit Forward voltage V I = 200 mA 0.50 0.58 V F F Reverse current I V = 10 V 0.1 1 mA R R Terminal capacitance C V = 0 V, f = 1 MHz 25 pF t R I = I = 100 mA, I = 10 mA, F R rr * Reverse recovery time t 3 ns rr R = 100 W L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 250 MHz 2. This p

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UP0KG8D Common characteristics chart UP0KG8D_P -T T a P  T T a 120 80 40 0 0 40 80 120 Ambient temperature T (°C) a Characteristics charts of SBD UP0KG8D_I -V UP0KG8D_I -T UP0KG8D_C -V F F R a D R I  V I  T C  V F F R a D R 4 2 10 200 10 f = 1 MHz V = 10 V R T = 25°C a 160 3 10 T = 85°C a 120 25°C 2 10 10 −25°C 80 10 40 0 1 0 0 0.2 0.4 0.6 0.8 -25 15 55 0 8 16 ( ) (° ) ( ) Forward voltage V V Ambient temperature T C Reverse voltage V V F a R SJJ00334AED 3 Forward current I (mA)

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UP0KG8D Characteristics charts of Tr UP0KG8D_V -I UP0KG8D_ h -I UP0KG8D_I -V CE(sat) C FE C C CE I  V V  I h  I C CE CE(sat) C FE C −10 300 −160 I /I = 10 C B T = 25°C I = −1.0 mA a B V = −10 V CE T = 85°C − 0.9 mA a − 0.8 mA − 0.7 mA 25°C −120 − 0.6 mA −1 200 −25°C − 0.5 mA − 0.4 mA −80 − 0.3 mA T = 85°C −1 a −10 100 − 0.2 mA −40 −25°C 25°C − 0.1 mA −2 −10 0 0 −1 2 −1 2 3 −10 −1 −10 −10 0 −4 −8 −12 −10 −1 −10 −10 −10 Collector-emitter voltage V (V) Collector current I (mA) Collector cu

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application