Bedienungsanleitung Panasonic Schottky Barrier Diodes MA3J7440G

Inhaltszusammenfassung zur Seite Nr. 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3J7440G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features ■ Package
• •
High-density mounting is possible Code
•
Forward current (Average) I = 200 mA rectification is possible SMini3-F2
F(AV)
•
Pin Name
1: Anode
2: N.C.
■ Absolute Maximum Ratings T = 25°C
a
3: Cathode
Parameter Symbol Rating Unit
Reverse voltage V 30 V
R ■ Marking Symbol: M1M
Repet

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This product complies with the RoHS Directive (EU 2002/95/EC). MA3J7440G I  V I  V V  T F F R R F a 3 5 10 10 0.5 100°C 25°C T = 150°C a 2 T = 150°C 4 a 0.4 10 10 I = 200 mA F −20°C 3 10 10 0.3 100°C 100 mA 2 1 10 0.2 25°C −1 0.1 10 10 10 mA −2 10 1 0 −40 0 40 80 120 160 200 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 Forward voltage V (V) Reverse voltage V (V) Ambient temperature T (°C) F R a I  T C  V I  T R a t R F(AV) a 5 40 300 10 f = 1 MHz I F T = 25°C a t p 250 T 4 10 15 V 30

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This product complies with the RoHS Directive (EU 2002/95/EC). MA3J7440G SMini3-F2 Unit: mm 2.00 ±0.20 +0.05 0.30 −0.02 3 12 +0.05 (0.65) (0.65) 0.13 −0.02 1.30 ±0.10 (5°) SKH00198BED 3 (0.89) 0 to 0.10 1.25 ±0.10 0.90 ±0.10 2.10 ±0.10 (5°) 0.425 ±0.050 (0.49)

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Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application