Panasonic MA3XD11 دليل المستخدم

ملخص المحتوى في الصفحة رقم 1

This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
+0.10
0.40
–0.05 +0.10
0.16
–0.06
3
■ Features
• Forward current (Average) I = 1 A rectification is possible
F(AV)
• Low forward voltage V
F
1 2
(0.95) (0.95)
1.9±0.1
+0.20
2.90
–0.05
■ Absolute Maximum Ratings T = 25°C 10˚
a
Parameter Symbol Rating Unit
Reverse voltage V 20 V
R
Repetitive peak reverse voltage V 25 V
RRM 1:

ملخص المحتوى في الصفحة رقم 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA3XD11 I  V I  V V  T F F R R F a −1 1.0 10 10 T = 125°C a T = 125°C a 1 −2 10 0.8 −1 75°C 10 −3 10 0.6 75°C −2 10 −4 25°C 10 25°C −3 10 0.4 −20°C I = 1 A −5 F 10 −4 10 0.2 −6 10 100 mA −5 10 10 mA −7 −6 10 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 010 20 30 −40 0 40 80 120 160 ( ) ( ) Forward voltage V (V) Reverse voltage V V Ambient temperature T °C F R a I  T R a 2 10 V = 20 V R 10 V 10 5 V 1 −1 10 −2 10 −3 10 −40 0 40 80 120 1

ملخص المحتوى في الصفحة رقم 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application