Panasonic MA3X715 (MA715) دليل المستخدم

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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3X715 (MA715)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
+0.10
0.40
–0.05 +0.10
0.16
–0.06
3
■ Features
• Low forward voltage V
F
• Optimum for high frequency rectification because of its short
1 2
reverse recovery time t
rr
(0.95) (0.95)
1.9±0.1
+0.20
2.90
–0.05
■ Absolute Maximum Ratings T = 25°C 10˚
a
Parameter Symbol Rating Unit
Reverse voltage V 30 V
R
1: Anode 1
Maxi

ملخص المحتوى في الصفحة رقم 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA3X715 I  V I  V V  T F F R R F a 3 4 10 10 0.8 I = 30 mA F T = 125°C a 2 T = 125°C 10 a 3 75°C 10 25°C −20°C 0.6 10 75°C 2 10 10 mA 1 0.4 25°C 10 −1 10 0.2 1 −2 1 mA 10 −3 −1 0 10 10 −40 40 120 0 0.8 1.6 2.4 010 20 30 ( ) ( ) Reverse voltage V (V) Ambient temperature T °C Forward voltage V V R a F I  T C  V I  t R a t R F(surge) W 4 2 10 2.0 10 f = 1 MHz T = 25°C a T = 25°C a I F(surge) V = 30 V 3 R t 10 W Non-repeti

ملخص المحتوى في الصفحة رقم 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application