Panasonic MA2J729 (MA729) دليل المستخدم

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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2J729 (MA729)
Silicon epitaxial planar type
Unit: mm
1.25±0.1 0.7±0.1
For super high speed switching
0.35±0.1
For small current rectification
1
0 to 0.1
■ Features
• Forward current (Average) I = 200 mA rectification is
F(AV)
possible
• High-density mounting is possible 2
+0.1
0.16
0.5±0.1 –0.06
5˚
■ Absolute Maximum Ratings T = 25°C
a
Parameter Symbol Rating Unit
Reverse voltage V 30 V
R
1: Anode
Rep

ملخص المحتوى في الصفحة رقم 2

This product complies with the RoHS Directive (EU 2002/95/EC). MA2J729 I  V I  V V  T F F R R F a 5 3 10 10 0.5 100°C 25°C T = 150°C a 2 4 10 10 0.4 I = 200 mA F T = 150°C a −20°C 3 10 10 0.3 100°C 100 mA 2 10 1 0.2 25°C −1 10 10 0.1 10 mA −2 10 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 −40 0 40 80 120 160 200 ( ) Forward voltage V (V) Reverse voltage V V Ambient temperature T (°C) F R a I  T C  V R a t R 5 40 10 f = 1 MHz T = 25°C a 4 10 15 V 30 5 V 3 10 V = 30 V R 20 2 10 10

ملخص المحتوى في الصفحة رقم 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application